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Volumn 93, Issue 17, 2008, Pages
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Spatially resolved electronic properties of MgO/GaAs(001) tunnel barrier studied by ballistic electron emission microscopy
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Author keywords
[No Author keywords available]
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Indexed keywords
BALLISTICS;
ELECTRIC CONDUCTIVITY;
ELECTRON EMISSION;
ELECTRON MOBILITY;
ELECTRONIC PROPERTIES;
ELECTRONIC STRUCTURE;
ELECTRONS;
EMISSION SPECTROSCOPY;
EXPLOSIVES;
HEAT CONDUCTION;
HETEROJUNCTIONS;
OXYGEN;
OXYGEN VACANCIES;
PHOTOELECTRON SPECTROSCOPY;
SCHOTTKY BARRIER DIODES;
SEMICONDUCTOR JUNCTIONS;
TUNNELS;
X RAY PHOTOELECTRON SPECTROSCOPY;
BALLISTIC ELECTRON EMISSION MICROSCOPIES;
BARRIER HEIGHTS;
CONDUCTION CHANNELS;
DEFECT STATES;
ELECTRONS ENERGIES;
HETEROSTRUCTURE;
MAGNETIC TUNNEL JUNCTIONS;
MGO(001) TUNNEL BARRIER;
OXIDE LAYERS;
SCHOTTKY BARRIER HEIGHTS;
SPATIALLY RESOLVED;
TUNNEL BARRIERS;
X-RAY PHOTOELECTRON SPECTROSCOPIES;
TUNNEL JUNCTIONS;
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EID: 55149124220
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.3012571 Document Type: Article |
Times cited : (18)
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References (17)
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