Growth of tantalum nitride films on si by radio frequency reactive sputtering of ta in n2/ar gas mixtures: Effect of bias

Journal of the Electrochemical Society

Volumn 147, Issue 2, 2000, Pages 713-718

  Lin, Jing Cheng ^a   Lee, Chiapyng ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; CRYSTAL MICROSTRUCTURE; FILM GROWTH; REACTION KINETICS; SEMICONDUCTING SILICON; SPUTTER DEPOSITION; STRUCTURE (COMPOSITION); TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

CRYSTALLINE QUALITY; RADIOFREQUENCY REACTIVE SPUTTERING; TANTALUM NITRIDE FILMS;

TANTALUM COMPOUNDS;

EID: 0034140135     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393257     Document Type: Article

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