Growth of tantalum nitride films on Si by radio frequency reactive sputtering: Effect of N2/Ar flow ratio

Journal of the Electrochemical Society

Volumn 146, Issue 5, 1999, Pages 1835-1839

  Lin, Jing Cheng ^a   Chen, Gene ^a   Lee, Chiapyng ^a  

^a NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; AUGER ELECTRON SPECTROSCOPY; CRYSTAL MICROSTRUCTURE; FILM GROWTH; MATHEMATICAL MODELS; NITROGEN; REACTION KINETICS; SILICON WAFERS; SPUTTER DEPOSITION; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

TANTALUM NITRIDE;

TANTALUM COMPOUNDS;

EID: 0032638836     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391852     Document Type: Article

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