CVD-Cobalt for the Next Generation of Source/Drain Salicidation and Contact Silicidation in Novel MOS Device Structures with Complex Shape

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 501-504

  Kang, S B ^a   Kim, H S ^a   Moon, K J ^a   Sohn, W H ^a   Choi, G H ^a   Kim, S H ^b   Bae, N J ^b   Chung, U I ^a   Moon, J T ^a  

^a SAMSUNG Electronics   (South Korea)

^b CVD Division   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CHEMICAL VAPOR DEPOSITION; COBALT; ELECTRIC RESISTANCE; OHMIC CONTACTS; PARTIAL PRESSURE; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON COMPOUNDS; TITANIUM; TITANIUM NITRIDE; X RAY DIFFRACTION ANALYSIS;

CONTACT SILICIDATION; SALICIDATION;

CMOS INTEGRATED CIRCUITS;

EID: 0842309770     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. K. Matsuo et al., "Damascene Metal Gate MOSFETs with Co Silicided Source/Drain and High-k Gate Dielectrics" VLSI Tech. Dig. p.70 (2000).
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4. D.K. Sohn et al., "High Thermal Stability and Low Junction Leakage Current of Ti Capped Co Salicide and its Feasibility for High Thermal Budget CMOS Devices" IEDM Tech. Dig. p.1005 (1998).
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