Growth of CoSi2 through an oxide layer: Dependence on Si(100) surface structure

Thin Solid Films

Volumn 379, Issue 1-2, 2000, Pages 265-271

  Heo, Jinhwa ^a   Jeon, Hyeongtag ^a  

^a Hanyang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COBALT COMPOUNDS; EVAPORATION; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; MORPHOLOGY; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; VACUUM APPLICATIONS;

ULTRAHIGH VACUUM EVAPORATION SYSTEMS;

SEMICONDUCTING FILMS;

EID: 0034513843     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(00)01564-9     Document Type: Article

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