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Volumn 47, Issue 6 PART 2, 2008, Pages 5032-5035
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Eduction position control of incorporated gallium in diamond-like carbon deposited by focused-ion-beam chemical vapor deposition
a,b
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Author keywords
Annealing treatment; Diamond like carbon (DLC); Eduction control; Focused ion beam chemical vapor deposition (FIB CVD); Gallium (Ga)
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Indexed keywords
ANNEALING;
CARBON;
COMMINUTION;
DIAMOND LIKE CARBON FILMS;
DIAMONDS;
ELECTRIC LOAD MANAGEMENT;
FOCUSED ION BEAMS;
ION BEAMS;
IONS;
POSITION CONTROL;
VAPORS;
WATER POLLUTION;
ANNEALING TREATMENT;
ANNEALING TREATMENTS;
ATOMIC RATIOS;
DIAMOND-LIKE CARBON (DLC);
DIAMOND-LIKE CARBONS;
EDUCTION CONTROL;
FOCUSED-ION-BEAM CHEMICAL VAPOR DEPOSITION (FIB-CVD);
GAS SOURCES;
MATERIAL CHARACTERISTICS;
NANOELECTROMECHANICAL DEVICES;
STRUCTURAL DEFECTS;
VIA HOLES;
CHEMICAL VAPOR DEPOSITION;
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EID: 55049136519
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.5032 Document Type: Article |
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Times cited : (7)
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References (10)
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