Compact model of output conductance in nanoscale bulk MOSFET based on 2D analytical calculations

Solid-State Electronics

Volumn 52, Issue 11, 2008, Pages 1722-1729

  Weidemann, Michaela ^a   Kloes, Alexander ^a   Iñiguez, Benjamin ^b  

^a TECHNISCHE HOCHSCHULE MITTELHESSEN   (Germany)

^b UNIVERSITAT ROVIRA I VIRGILI   (Spain)

Author keywords

2D Poisson; Bulk MOSFET; Channel length modulation; Conformal mapping; Output conductance

Indexed keywords

CIRCUIT SIMULATION; CONFORMAL MAPPING; MODULATION; MOSFET DEVICES; POISSON DISTRIBUTION;

2D POISSON; ANALYTICAL CALCULATIONS; BULK MOSFET; CHANNEL LENGTH MODULATION; CHANNEL LENGTHS; CLOSED-FORM; COMPACT MODELS; EFFECTIVE CHANNEL LENGTHS; FITTING PARAMETERS; MOS-FET; MOSFETS; NANOSCALE; OUTPUT CONDUCTANCE; OUTPUT CONDUCTANCES; SCALING BEHAVIORS;

POISSON EQUATION;

EID: 55049119879     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2008.06.043     Document Type: Article

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