Self-consistent 2D compact modeling of nanoscale bulk MOSFETs

Solid-State Electronics

Volumn 51, Issue 5, 2007, Pages 739-748

  Kloes, Alexander ^a   Weidemann, Michaela ^a  

^a TECHNISCHE HOCHSCHULE MITTELHESSEN   (Germany)

Author keywords

Compact modeling; MOSFET; Nanoscale; Self consistent; Surface potential; Two dimensional

Indexed keywords

HYDRODYNAMICS; NANOSTRUCTURED MATERIALS; POISSON EQUATION; SCALABILITY; SURFACE POTENTIAL; TWO DIMENSIONAL;

COMPACT MODELING; CURRENT EQUATION; POTENTIAL BARRIER; SELF CONSISTENT;

MOSFET DEVICES;

EID: 34248525912     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.02.033     Document Type: Article

References (13)

1. Lundstrom M., and Ren Z. Essential physics of carrier transport in nanoscale MOSFETs. IEEE Trans Electron Dev 49 January (2002)
2. Kloes A., and Kostka A. A new analytical method of solving 2D Poisson's equation in MOS devices applied to threshold voltage and subthreshold modeling. Solid State Electron 39 (1996) 1761-1775
3. Kloes A., and Kostka A. PREDICTMOS - a predictive compact model of small-geometry MOSFETs for circuit simulation and device scaling calculations. Solid State Electron 44 (2000) 1145-1156
4. Kloes A. Unified current equation for predictive modeling of submicron MOSFETs. Solid State Electron 49 (2005)
5. Foty D. MOSFET modeling for circuit simulation. IEEE Circuits Dev Mag July (1998) 26-31
6. Arora N. MOSFET models for VLSI circuit simulation (1993), Springer-Verlag, Wien
7. ∞-continuous model for small geometry MOSFETs. IEEE Trans Electron Dev 42 February (1995)
8. Osthaug J., Fjeldly T.A., and Iñiguez B. Closed-form 2D modeling of sub-100 nm MOSFETs in the subthreshold regime. J Telecommun Inform Technol 1 (2004)
9. Klaassen F.M., and de Groot W.C.J. Modeling of scaled-down MOS transistors. Solid State Electron 23 (1980)
10. Fjeldly T.A., and Shur M. Threshold voltage modeling and the subthreshold regime of operation of short-channel MOSFET's. IEEE Trans Electron Dev 40 January (1993)
11. Corless R.M., Gonnet G.H., Hare D.E.G., Jeffrey D.J., and Knuth D.E. On the Lambert W function. Adv Comput Math 5 (1996)
12. Sim J.-h. An analytical deep submicron MOS device model considering velocity overshoot behavior using energy balance equation. IEEE Trans Electron Dev 42 May (1995)
13. TCAD Sentaurus, Version X-2005.10, Manual, Synopsys, Inc.