Electroless deposition of nickel-phosphorous nano-dots for low-temperature crystallization of amorphous silicon

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 727-730

  Liu, Yih Ming ^a   Sung, Yuh ^b   Pu, Nen Wen ^a   Chou, Yu Hsien ^a   Yeh, Kung Chen ^a   Ger, Ming Der ^a  

^a NATIONAL DEFENSE UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

Electroless plating; Metal induced crystallization (MIC); Ni P; Non isothermal deposition (NITD); Poly Si

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS MATERIALS; ANNEALING; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; DEPOSITION; ELECTROLESS PLATING; FILM GROWTH; NANOCRYSTALLINE ALLOYS; NICKEL; NICKEL ALLOYS; PHOSPHORUS; POLYCRYSTALLINE MATERIALS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON; THICK FILMS;

AMORPHOUS SI FILMS; CRYSTALLINITY; CRYSTALLIZATION OF AMORPHOUS SILICONS; DEPOSITION TIMES; ELECTROLESS DEPOSITIONS; INDUCED CRYSTALLIZATIONS; NI-P; NON-ISOTHERMAL DEPOSITION (NITD); POLY-SI; POLYCRYSTALLINE SILICON THIN FILMS; POLYCRYSTALLINE SIS; PRETREATMENT; PROCESS PARAMETERS; SUBSTRATE TEMPERATURES; SURFACE ACTIVATIONS; TEMPERATURE FORMATIONS; TEMPERATURE GROWTHS;

AMORPHOUS SILICON;

EID: 55049105067     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.08.123     Document Type: Article

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