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Volumn 47, Issue 6 PART 1, 2008, Pages 4692-4695
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Vacuum and air annealing effects on properties of indium tin oxide films prepared by ion-assisted electron beam evaporation
a
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Author keywords
Annealing temperature; Electron beam evaporation; Indium tin oxide
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Indexed keywords
ELECTRIC CURRENTS;
ELECTRIC RESISTANCE;
ELECTRON BEAMS;
ELECTRON GUNS;
EVAPORATION;
GALVANOMAGNETIC EFFECTS;
HALL EFFECT;
INDIUM;
MAGNETIC FIELD EFFECTS;
MOISTURE;
OPTICAL FILMS;
OXIDE FILMS;
PARTICLE BEAMS;
PHOTOLITHOGRAPHY;
TIN;
TITANIUM COMPOUNDS;
VACUUM;
VACUUM EVAPORATION;
VACUUM TECHNOLOGY;
VAPORS;
ANNEALING EFFECTS;
ANNEALING TEMPERATURE;
ANNEALING TEMPERATURES;
ATOMIC FORCES;
DEPOSITED FILMS;
ELECTRICAL RESISTIVITIES;
ELECTRON BEAM EVAPORATION;
ELECTRON BEAM EVAPORATIONS;
GLASS SUBSTRATES;
GRAIN SIZES;
HALL EFFECT MEASUREMENTS;
IN VACUUMS;
INDIUM TIN OXIDE;
INDIUM TIN OXIDE FILMS;
ITO FILMS;
OPTICAL BANDS;
OPTICAL TRANSMITTANCES;
PROBE METHODS;
X-RAY DIFFRACTIONS;
ANNEALING;
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EID: 55049104837
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.4692 Document Type: Article |
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Times cited : (20)
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References (14)
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