Influence of crystal perfection on the reverse leakage current of the SiGe/Si p-n heterojunction diodes

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 551-555

  Liu, X F ^a   Liu, J P ^a   Li, J P ^a   Wang, Y T ^a   Li, L Y ^a   Sun, D Z ^a   Kong, M Y ^a   Lin, L Y ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); HETEROJUNCTIONS; LEAKAGE CURRENTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; X RAY CRYSTALLOGRAPHY;

CRYSTALLINE QUALITY; HETEROJUNCTION DIODES; REVERSE LEAKAGE CURRENTS;

MOLECULAR BEAM EPITAXY;

EID: 0032630071     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01424-9     Document Type: Article

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