Structure and dynamics of Ge in the Si-Si O2 system: Implications for oxide-embedded Ge nanoparticle formation

Electrochemical and Solid-State Letters

Volumn 11, Issue 12, 2008, Pages

  Yu, Decai ^a   Hwang, Gyeong S ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMIC PHYSICS; ATOMS; CHEMICAL REACTIONS; DENSITY FUNCTIONAL THEORY; GERMANIUM; NANOPARTICLES; NANOSTRUCTURES; OXIDE MINERALS; QUARTZ;

AMORPHOUS; EXCHANGE PROCESSES; GE ATOMS; GE NANOPARTICLES; GRADIENT CORRECTED; LATTICE ATOMS; OXIDE MATRIXES; PERIODIC DENSITY FUNCTIONAL THEORY CALCULATIONS; SI ATOMS; SI(001); SITE EXCHANGES; STRUCTURE AND DYNAMICS;

SILICON;

EID: 54949087926     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2978960     Document Type: Article

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