The influence of In/Cu ratio on electrical properties of CuO:In thin films prepared by plasma-enhanced CVD

Chemical Vapor Deposition

Volumn 14, Issue 1-2, 2008, Pages 9-13

  Hao, Yongliang ^a   Gong, Hao ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Amorphous; CuO:In; Cupric oxide; Resistivity; Thin film; XPS

Indexed keywords

ACTIVATION ENERGY; AMORPHOUS FILMS; ATOMIC PHYSICS; ATOMS; CONCENTRATION (PROCESS); COPPER OXIDES; ELECTRIC PROPERTIES; FILM PREPARATION; PHOTOELECTRON SPECTROSCOPY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PLASMAS; THICK FILMS; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

AMORPHOUS; CUO:IN; CUPRIC OXIDE; RESISTIVITY; XPS;

COPPER;

EID: 54949085036     PISSN: 09481907     EISSN: 15213862     Source Type: Journal    
DOI: 10.1002/cvde.200706645     Document Type: Article

References (28)

1. D. X. Wu, Q. M. Zhang, M. Tao, Phys. Rev. B 2006, 73, 235206.
2. J. Ghijsen, L. H. Tjeng, J. V. Elp, H. Eskes, I Westerink, G. A. Sawatz-ky, Phys. Rev. B 1988, 38, 11322.
3. P. Samarasekara, M.A. K. Mallika Arachchi, A. S. Abeydeera, C. A. N. Fernando, A. S. Disanayake, R.M. G. Rajapakse, Bull. Mater. Sci. 2005, 28, 483.
4. A. Cruccolini, R. Narducci, R. Palombari, Sensors and Actuators B 2004, 98, 227.
5. S. Anandan, X. G. Wen, S. H. Yang, Mater. Chem. Phys. 2005, 93, 35.
6. M.-V. Jorge, R.-O. Jorge, M.A.-R. Victor, R. Facundo, Appl. Catal. A 2003, 238, 1.
7. Y. S. Gong, C. Lee, C. K. Yang, J. Appl. Phys. 1995, 77, 5422.
8. B. Orel, F. vegl, N. Bukovec, M. Kosec, J. Non-Cryst. Solids 1993, 159, 49.
9. P. Snmarasekara, N.T.R. N. Kumara, N.U. S. Yapa, J. Phys.: Condens. Matter 2006, 18, 2417.
10. R. Widmer, F. J. Haug, P. Ruffieux, O. Groning, M. Bielmann, P. Groning, R. Fasel, J. Am. Chem. Soc. 2006, 128, 14103.
11. R. E. Leuchter, L. S. Hristakos, Mater. Res. Soc. Symp. Proc. 1996, 401, 551.
12. H. Holzschuh, H. Suhr, Appl. Phys. A 1990, 51, 486.
13. Y. Ohya, S. Ito, T. Ban, Y. Takahashi, Key Engi. Mate. 2000, 181-182, 113.
14. S. Suda, S. Fujitsu, K. Koumoto, H. Yanagida, Jpn. J. Appl. Phys. 1992, 31, 2488.
15. K. Suba, Okram G. Singh, B. D. Padalia, Om. Prakash, D. Chandrasekharam, Mate. Res. Bull. 1994, 29, 443.
16. F. Lanza, R. Feduzi, J. Mater. Res. 1996, 5, 1739.
17. D. H. Yoon, J. H. Yu, G. M. Choi, Sensors and Actuators B 1998, 46, 15.
18. H. O. Pierson, Handbook of Chemical Vapor Deposition: Principle, Technologies and Applications, William Andrew, Norwick 1999.
19. nd Ed, Addison-Wesley 1978.
20. H. Hosono, M. Yasukawa, H. Kawazoe, J. Non-Cryst. Solids 1996, 203, 334.
21. H. Okamoto, K. Hattori, Y. Hamakawa, J. Non-Cryst. Solids 1993, 445, 164.
22. A. Parretta, M. K. Jayaraj, A. Di Nocera, S. Loreti, L. Quercia, A. Agati, Phys. Status Solidi B 1996, 155, 399.
23. C. C. Chusuei, M. A. Brookshier, D. W. Doodman, Langmuri 1999, 15, 2806.
24. C. S. Fadley, Electron Spectroscopy: Theory, Techniques and Applications, Volume II, (Eds: C. R. Brundle, A. D. Baker), Academic Press, New York 1978.
25. G. G. Condorelli, G. Malandrino, I. Fragalà, Chem. Mater. 1995, 7, 2096.
26. D. F. Mitchell, G. I. Sproule, M. J. Graham, Surf. Interface Anal. 1990, 15, 487.
27. L. Liu, K. W. Bai, H. Gong, P. Wu, Chem. Mater. 2005, 17, 5529.
28. Y. Wang, H. Gong, Chem. Vap. Deposition 2000, 6, 285.