Fabrication of self-assembling InGaN and AlGaN quantum dots on AlGaN surfaces using anti-surfactant

Microelectronic Engineering

Volumn 49, Issue 3-4, 1999, Pages 287-290

  Hirayama, Hideki ^a   Tanaka, Satoru ^b   Aoyagi, Yoshinobu ^a  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001125207     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00448-7     Document Type: Erratum

References (5)

1. S. Nakamura et al., Jpn. J. Appl. Phys. 36 (1997) L1059.
2. M. Sugawara, The Second International Conference on Nitride Semiconductors (ICNS'97) Tu3-1 220 (1997).
3. S. Tanaka et al., Appl. Phys. Lett. 69 (1996) 4096.
4. H. Hirayama et al., Appl. Phys. Lett. 72 (1998) 1736.
5. S. Tanaka et al., Appl. Phys. Lett. 71 (1997) 1299.