Influence of defects on the luminescence of Ge/Si quantum dots

Physica Status Solidi C: Conferences

Volumn , Issue 4, 2003, Pages 1267-1270

  Sobolev, N A ^a,b   Fonseca, A ^a   Leitao J P ^a   Carmo, M C ^a   Presting, H ^c   Kibbel, H ^c  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b INSTITUTE OF SOLID STATE AND SEMICONDUCTOR PHYSICS   (Belarus)

^c DAIMLER AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SILICON; GE/SI QUANTUM DOTS; HYDROGEN PASSIVATION; REDISTRIBUTION PROCESS; TEMPERATURE DEPENDENCE;

DEFECTS; IRRADIATION; LUMINESCENCE; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0442315313     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303065     Document Type: Conference Paper

References (9)

1. R. Leon et al., Appl. Phys. Lett. 76, 2074 (2000).
2. N. A. Sobolev et al., phys. stat. sol. (b) 224, 93 (2001).
3. Ch. Ribbat et al., Electron. Lett. 37, 174 (2001).
4. J. Konle et al., Physica E 14, 249 (2002).
5. G. Davies, Phys. Rep. 176, 83 (1989).
6. R. Sauer, in: Landolt-Börnstein, Vol. 22b (Springer, Berlin, 1989), p. 338.
7. For a review of the hydrogen passivation, see e.g. Hydrogen in Semiconductors, Semiconductors and Semimetals, Vol. 34, edited by I. Pankove and N. M. Johnson (Academic Press, New York, 1991).
8. G. Davies, Rep. Prog. Phys. 44, 787 (1981).
9. P. Boucaud et al., Phys. Rev. B 64, 155310 (2001).