Liquid phase deposited silicon oxide with lower boron impurity grown on gallium nitride by temperature-difference method

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 2, 2008, Pages 231-234

  Lee, Ming Kwei ^a   Ho, Chen Lin ^a   Zeng, Jia Yi ^a  

^a NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BORIC ACIDS; DIFFERENCE METHODS; EFFECTIVE OXIDE CHARGES; ELECTRICAL CHARACTERISTICS; LIQUID PHASES; PHASE DEPOSITIONS; SILICON OXIDE FILMS; SILICON OXIDES;

ACIDS; BORIDE COATINGS; BORON; BORON NITRIDE; COLLOIDS; DEPOSITION; FILM GROWTH; FLUORINE; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; GELATION; GROWTH (MATERIALS); INORGANIC ACIDS; LEAKAGE CURRENTS; NITRIDES; OXIDE FILMS; OXIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH; SILICA; SILICA GEL; SILICON COMPOUNDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 54849404555     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200723185     Document Type: Article

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