Reliability of fluorinated silicon oxide film prepared by temperature difference-based liquid phase deposition

Journal of the Electrochemical Society

Volumn 147, Issue 11, 2000, Pages 4268-4272

  Yeh, Ching Fa ^a   Lee, Yueh Chuan ^a   Lee, Su Chen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT DENSITY; FLUORINE; INFRARED SPECTROSCOPY; PERMITTIVITY; RELIABILITY; SILICON COMPOUNDS; STRESS ANALYSIS; TEMPERATURE;

FLUORINATED SILICON OXIDE FILMS; INTERMETAL DIELECTRICS; LIQUID PHASE DEPOSITION;

DIELECTRIC FILMS;

EID: 0034323178     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1394051     Document Type: Article

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