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Volumn 205, Issue 4, 2008, Pages 922-926
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Spectroscopic ellipsometry study of thin diffusion barriers of TaN and Ta for Cu interconnects in integrated circuits
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Author keywords
[No Author keywords available]
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Indexed keywords
BARRIER THINS;
BILAYER FILMS;
COPPER DIFFUSIONS;
CU INTERCONNECTS;
DEPOSITION CONDITIONS;
DIELECTRIC FUNCTIONS;
EFFECTIVE MEDIUM APPROXIMATIONS;
ELECTRICAL RESISTIVITIES;
ELECTRON MEAN FREE PATHS;
ELLIPSOMETRIC MEASUREMENTS;
ENERGY RANGES;
FILM COMPOSITIONS;
FREE CARRIERS;
LORENTZ MODELS;
NATIVE OXIDE LAYERS;
OPTICAL AND ELECTRICAL PROPERTIES;
REACTIVE MAGNETRON SPUTTERING;
SI (100) SUBSTRATES;
SINGLE LAYERS;
TANTALUM NITRIDES;
UV-VISIBLE;
COPPER;
DIFFUSION BARRIERS;
ELECTRIC PROPERTIES;
ELECTRIC RESISTANCE;
ELLIPSOMETRY;
INTEGRATED CIRCUITS;
MAGNETIC FILMS;
MAGNETRON SPUTTERING;
MOLECULAR BEAM EPITAXY;
NITRIDES;
OPTICAL INTERCONNECTS;
OXIDE FILMS;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTOR DOPING;
SILICON;
SPECTROSCOPIC ELLIPSOMETRY;
TANNING;
TANTALUM;
TANTALUM COMPOUNDS;
THICK FILMS;
TRANSITION METALS;
ELECTRIC NETWORK ANALYSIS;
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EID: 54849403578
PISSN: 18626300
EISSN: 18626319
Source Type: Journal
DOI: 10.1002/pssa.200777831 Document Type: Article |
Times cited : (9)
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References (15)
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