A novel cold-FET method for determining extrinsic capacitances using a capacitive transmission line model

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 2001, Pages 1261-1264

  Lai, Yeong Lin ^a   Chen, Cheng Tsung ^a  

^a FENG CHIA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; COMPUTER SIMULATION; ELECTRIC LINES; EQUIVALENT CIRCUITS; MATRIX ALGEBRA; SCATTERING PARAMETERS;

CAPACITIVE TRANSMISSION LINE MODEL; DRAIN CAPACITANCE; GATE CAPACITANCE; LINEAR REGRESSION TECHNIQUE;

FIELD EFFECT TRANSISTORS;

EID: 0035689679     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Ultra-low-noise performance of 0.15-micron gate GaAs MESFET's made by direct ion implantation for low-cost MMIC's applications
2. 2-V-operation δ-doped power HEMT's for personal handy-phone systems
3. Novel millimeter wave active MMIC triplers
4. A new method for determining the FET small-signal equivalent circuit
5. A new pinched-off cold-FET method to extract parasitic capacitances of MESFET's and HEMT's
6. Improved equivalent circuit for determination of MESFET and HEMT parasitic capacitances from "Coldfet" measurements
7. Equivalent-circuit parameter extraction for cold GaAs MESFET's
8. Bias-dependent "cold-(H)FET" modeling
9. Transient simulation of lossy interconnects based on the recursive convolution formulation