pMOS dosimetric transistors with two-layer gate oxide

Sensors and Actuators, A: Physical

Volumn 63, Issue 2, 1997, Pages 129-134

  Ristić, Goran ^a   Jakšić, Aleksandar ^a   Pejović, Momčilo ^a  

^a UNIVERSITY OF NI   (Serbia)

Author keywords

CVD oxide; Fading; Interface traps; Oxide trapped charge; pMOS dosimeters; Sensitivity

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC FIELD EFFECTS; INTERFACES (MATERIALS); IRRADIATION; MOSFET DEVICES; OPTICAL CORRELATION; OXIDES;

PMOS DOSIMETRIC TRANSISTORS;

DOSIMETERS;

EID: 0031258064     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01592-6     Document Type: Article

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