The role of fixed and switching traps in long-Term fading of implanted and unimplanted gate oxide RADFETs

IEEE Transactions on Nuclear Science

Volumn 52, Issue 6, 2005, Pages 2570-2577

  Haran, Avner ^a,b   Jaksic, Aleksandar ^a,c  

^a IEEE   (Ireland)

^b SOREQ NUCLEAR RESEARCH CENTER   (Israel)

^c UNIVERSITY COLLEGE CORK   (Ireland)

Author keywords

Annealing; Border traps; Dosimetry; Fading; pMOS dosimeters; RADFETs

Indexed keywords

ANNEALING; DOSIMETRY; ELECTRON TRAPS; FADING (RADIO); IRRADIATION; RADIATION; SPACE APPLICATIONS;

BORDER TRAPS; FADING; PMOS DOSIMETERS; RADFET;

FIELD EFFECT TRANSISTORS;

EID: 33144454427     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2005.860705     Document Type: Conference Paper

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