MOOSE: A physically based compact DC model of SOI LDMOSFETs for analogue circuit simulation

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 23, Issue 10, 2004, Pages 1399-1410

  D'Halleweyn, Nele V T ^a,b   Benson, James ^a,c   Redman White, William ^a   Mistry, Ketan ^a,d   Swanenberg, Maarten ^e  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b Arnold and Siedsma   (Belgium)

^c UNIVERSITY OF SURREY   (United Kingdom)

^d UNIVERSITY COLLEGE DUBLIN   (Ireland)

^e NXP SEMICONDUCTORS   (Netherlands)

Author keywords

Analogue circuits; Compact models; Laterally double diffused (LD) MOSFET; MOS devices; Silicon on insulator technology; Simulation

Indexed keywords

COMPUTER SIMULATION; DOPING (ADDITIVES); MATHEMATICAL MODELS; PARAMETER ESTIMATION; SEMICONDUCTING SILICON; VOLTAGE CONTROL; VOLTAGE MEASUREMENT;

ANALOGUE CIRCUITS; COMPACT MODELS; LATERALLY DOUBLE DIFFUSED (LD); SILICON-ON-INSULATOR (SOI) TECHNOLOGY;

MOSFET DEVICES;

EID: 5444249843     PISSN: 02780070     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCAD.2004.835125     Document Type: Article

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