Growth and characterization of silicon nitride films for optoelectronics applications

Optical Materials

Volumn 27, Issue 2, 2004, Pages 139-146

  Pandey, R K ^a   Patil, L S ^a   Bange, Jaspal P ^a   Gautam, D K ^a  

^a NORTH MAHARASHTRA UNIVERSITY   (India)

Author keywords

Dielectric films; DMDS; Ellipsometer; FTIR; Si3N4; Thermal CVD

Indexed keywords

DEPOSITION; DIELECTRIC FILMS; ELLIPSOMETRY; FOURIER TRANSFORM INFRARED SPECTROSCOPY; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; THERMAL EFFECTS; WAVEGUIDES;

DEPOSITION TEMPERATURE; GAS FLOW; GLOW-DISCHARGE; WAVEGUIDE STRUCTURES;

SILICON NITRIDE;

EID: 5444224923     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2004.02.028     Document Type: Article

References (38)

1. Claassen W.A.P., Valkenburg W.G.J.N., Willemsen M.F.C., Wijgert W.M.v.d. J. Electrochem. Soc.: Solid State Sci. Technol. 132:1985;893.
2. Habraken F.H.P.M., Kuiper A.E.T., Oostrom A.V., Tamminga Y., Theeten J.B. J. Appl. Phys. 53(1):1982;404.
3. Lowe A.J., Powell M.J., Elliott S.R. J. Appl. Phys. 59(4):1986;1251.
4. Piccirillo A., Gobbi A.L. J. Electrochem. Soc. 137:1990;3910.
5. Lee J.Y.M., Sooriakumar K., Dang M.M. Thin Solid Films. 203:1991;275.
6. Bruno F., Guidice M.D., Recca R., Testa F. Appl. Opt. 30:1991;4560.
7. Gonzalvez J.M., Luna R.G., Tundance M., Sanchez O., Albella J.M., Duart J.M.M. Thin Solid Films. 220:1992;311.
8. Sekimoto M., Yoshihara H., Ohkubo T. J. Vac. Sci. Technol. 21:1982;1017.
9. Lanford W.A., Rand M.J. J. Appl. Phys. 49(4):1978;2473.
10. Bean K.E., Gleim P.S., Yeakley R.L. J. Electrochem. Soc. 114:1967;733.
11. Temple-Boyer P., Rossi C., Saint-Etienn E., Scheid E. J. Vac. Sci. Technol. A. 16(4):1998;2003.
12. Knolle W.R., Osenbach J.W. J. Appl. Phys. 58(3):1985;1248.
13. Bose M., Basa D.K., Bose D.N. J. Vac. Sci. Technol. A. 19(1):2001;41.
14. Tsang M.P., Ong C.W., Chong N., Choy C.L., Lim P.K., Hung W.W. J. Vac. Sci. Technol. A. 19(5):2001;2542.
15. Swann R.C.G., Mehta R.R., Gauge T.P. J. Electrochem. Soc.: Solid State Sci. Technol. 114:1967;713.
16. Pearce C.W., Fetcho R.F., Gross M.D., Koefer R.F., Pudliner R.A. J. Appl. Phys. 71(4):1992;1838.
17. Smith D.L., Alimonda A.S., von Preissing F.J. J. Vac. Sci. Technol. B. 8(3):1990;551.
18. Flewitt A.J., Dyson A.P., Robertson J., Milne W.I. Thin Solid Films. 383:2001;172.
19. Hanyaloglu B.F., Aydil E.S. J. Vac. Sci. Technol. A. 16(5):1998;2794.
20. Hsieh S.W., Chang C.Y., Lee Y.S., Lin C.W., Hsu S.C. J. Appl. Phys. 76(6):1994;3645.
21. Sinha A.K., Smith I.E. J. Appl. Phys. 49:1978;2756.
22. van de Ven E.P.G.T. Solid State Technol. 24:1981;167.
23. Lusting N., Kanicki J. J. Appl. Phys. 65:1989;3951.
24. Gwo S., Wu C.-L., Chien F.S.S., Yasuda T., Yamasaki S. Jpn. J. Appl. Phys. 40:2001;4368.
25. Gao D., Furukawa K., Nakashima H., Gao J. Jpn. J. Appl. Phys. 38:1999;4868.
26. Smith D.L., Alimonda A.S., Chen C.C., Ready S.E., Wacker B. J. Electrochem. Soc. 137(2):1990;614.
27. Liao W.-S., Lee S.-C. J. Electrochem. Soc. 144(4):1997;1477.
28. Rocheleau R.E., Zhang Zhe. Thin Solid Films. 220:1992;73.
29. Molinari M., Rinnert H., Vergnat M. Appl. Phys. Lett. 79:2001;2172.
30. Pandey R.K., Patil L.S., Bange J.P., Patil D.R., Mahajan A.M., Patil D.S., Gautam D.K. Opt. Mater. 25:2004;1.
31. Noskov A.G., Sokolova G.A., Trukhanov E.M., Stenin S.I. Thin Solid Films. 162:1988;129.
32. Cocher G., Mellattie H., Delbourgo R. J. Electrochem. Soc.: Solid State Sci. Technol. 125:1978;487.
33. Senkevich J.J., Desu S.B. Thin Solid Films. 332:1998;148.
34. Voss R.F., Clarke J. Phys. Rev. B. 13:1976;556.
35. Bredas J.L. Skotheim T.A. Handbook of Conducting Polymers. vol. 2:1986;859 Marcel Dekker, New York.
36. Lucovsky G., Richard P.D., Tsu D.V., Lin S.Y., Markunas R.J. J. Vac. Sci. Technol. A. 4:1986;681.
37. Parsons G.N., Lucovsky G. Phys. Rev. B. 41:1990;1664.
38. Alayo M.I., Pereyra I., Scopel W.L., Fantini M.C.A. Thin Solid Films. 402:2002;154.