A unified hot carrier degradation model for integrated lateral and vertical nDMOS transistors

IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD)

Volumn , Issue , 2003, Pages 88-91

  Moens, P ^a   Van den bosch, G ^b   Groeseneken, G ^b,c   Bolognesi, D ^a  

^a Technology R and D   (Belgium)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER AIDED DESIGN; COMPUTER SIMULATION; ELECTRON MOBILITY; ELECTRON TRAPS; HOT CARRIERS;

HOT-HOLE INJECTION;

MOSFET DEVICES;

EID: 0042941432     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)

1. C.Y. Tsai et al., "16-60V Rated LDMOS Show Advanced Performance in an 0.72 μm Evolution BiCMOS Power Technology", Proceedings of the International Electron Devices Meeting IEDM, (1997), pp367-370.
2. V. Parthasarathy et al., "A 33V, 0.25 mΩ*cm2 n-channel LDMOS in a 0.65 μm Smart Power Technology for 20-30V Operation", Proceedings of the International Symposium on Power Semiconductor Devices ISPSD (1998), pp. 61-64.
3. P. Moens et al., "I3T80: "A 0.35 μm Based System-on-Chip Technology for 42V Battery Automotive Applications", Proceedings of the International Symposium on Power Semiconductor Devices ISPSD (2002), pp225-228.
4. P. Moens et al., "A Novel Hot-Hole Injection Degradation Model for Lateral nDMOS Transistors", Proceedings of the International Electron Devices Meeting IEDM (2001 ), pp877-880.
5. R. Dreesen et al., "A New Degradation Model and Lifetime Extrapolation Technique for LDD nMOSFETs under Hot-Carrier Degradation", Microelectronics Reliability, 41, (2001), pp437-445.