|
|
Volumn 47, Issue 4 PART 2, 2008, Pages 3053-3055
|
|
Fabrication and characterization of inx Ga1-x N quantum dots using nitridation of nano-alloyed droplet growth technique
|
|
Author keywords
InGaN quantum dot; MOCVD; Nitridation
|
|
Indexed keywords
ATOMIC FORCE MICROSCOPY;
CORUNDUM;
DROP FORMATION;
DROPS;
FABRICATION;
GALLIUM ALLOYS;
GALLIUM NITRIDE;
LIGHT EMISSION;
LUMINESCENCE;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
MICROSCOPIC EXAMINATION;
NITRIDATION;
OPTICAL MICROSCOPY;
OPTICAL PROPERTIES;
OPTICAL WAVEGUIDES;
ORGANIC CHEMICALS;
ORGANIC COMPOUNDS;
ORGANOMETALLICS;
QUANTUM ELECTRONICS;
SECONDARY EMISSION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM WELLS;
ATOMIC FORCES;
AVERAGE DIAMETERS;
DROPLET GROWTHS;
GA ALLOYS;
GAN TEMPLATES;
GAN/SAPPHIRE;
IN COMPOSITIONS;
INGAN QUANTUM DOT;
INGAN QUANTUM DOTS;
LOW GROWTH TEMPERATURES;
METAL ORGANIC;
MOCVD;
PHOTO-LUMINESCENCE;
QUANTUM DOTS;
SAPPHIRE SUBSTRATES;
SELF ASSEMBLED;
SEM IMAGES;
UNIFORM DISTRIBUTIONS;
UNIFORMLY DISTRIBUTED;
SEMICONDUCTOR QUANTUM DOTS;
|
|
EID: 54249163608
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.3053 Document Type: Article |
|
Times cited : (3)
|
|
References (12)
|
