Highly enhanced second-order nonlinear susceptibilities in tailored GaN-AlGaN-AlN quantum well structures

Physica B: Condensed Matter

Volumn 403, Issue 17, 2008, Pages 2725-2731

  Rostami, A ^a   Baghban Asghari Nejad, H ^a   Rasooli Saghai, H ^b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b Department of Electrical Engineering ^*  (Iran)

Author keywords

Electroabsorption; Genetic algorithm; Second order susceptibility; Strained quantum well

Indexed keywords

DOPING (ADDITIVES); GALLIUM ALLOYS; GALLIUM NITRIDE; NATURAL FREQUENCIES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WIRES;

ABSORPTION COEFFICIENTS; ALGAN; ALN; ASYMMETRIC STRUCTURES; DIPOLE TRANSITIONS; DOPANT CONCENTRATIONS; DOPING CONCENTRATIONS; ELECTROABSORPTION; GENETIC ALGORITHM; INTER-SUBBAND; NON-LINEAR PROPERTIES; NUMERICAL SOLUTIONS; OPTIMIZED STRUCTURES; QUANTUM WELLS; QUANTUM-WELL STRUCTURES; RESONANT FREQUENCIES; SECOND ORDERS; SECOND-ORDER NONLINEAR SUSCEPTIBILITIES; SECOND-ORDER SUSCEPTIBILITY; SELF-CONSISTENT METHODS; SINGLE QUANTUM WELL STRUCTURES; STRAINED QUANTUM WELL; WELL WIDTHS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 54249154037     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2008.02.004     Document Type: Article

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