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Volumn 75, Issue 6, 1999, Pages 835-837

Midinfrared second-harmonic generation in p-type InAs/GaAs self-assembled quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRON RESONANCE; POLARIZATION; SECOND HARMONIC GENERATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WETTING;

EID: 0032615371     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.124529     Document Type: Article
Times cited : (28)

References (19)
  • 12
    • 85034188586 scopus 로고    scopus 로고
    • note
    • The 4.7 nm effective height is greater than the quantum dot height.
  • 13
    • 85034184145 scopus 로고    scopus 로고
    • note
    • In Ref. 10 we mentioned that we did not observe frequency doubling around 12.5 μm wavelength, while third-harmonic generation turned out to be very efficient. In the present work, the pump is set at higher energy.
  • 15
    • 85034179412 scopus 로고    scopus 로고
    • note
    • Only the heavy hole states are taken into account in the calculation.
  • 19
    • 85034188728 scopus 로고    scopus 로고
    • note
    • 3D corresponds to the bidimensional carrier density normalized by the 0.5 nm thickness of the InAs deposited layer.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.