An ultra-high level second-order nonlinear optical susceptibility in strained asymmetric GaN-AlGaN-AlN quantum wells: Towards all-optical devices and systems

Microelectronics Journal

Volumn 38, Issue 8-9, 2007, Pages 900-904

  Rostami, A ^a   Baghban, H ^a   Rasooli Saghai, H ^b  

^a UNIVERSITY OF TABRIZ   (Iran)

^b ISLAMIC AZAD UNIVERSITY   (Iran)

Author keywords

Asymmetric quantum well; Higher order nonlinearity; Optical susceptibility; Strained structure

Indexed keywords

ALUMINUM GALLIUM NITRIDE; NONLINEAR SYSTEMS; OPTICAL DEVICES; PIEZOELECTRICITY; STRAIN MEASUREMENT; WAVELENGTH;

CONSTANT WELL WIDTH; HIGHER ORDER NONLINEARITY; MOLE FRACTION; OPTICAL SUSCEPTIBILITY; RESONANT WAVELENGTH; STRAINED STRUCTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 34748885736     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2007.07.071     Document Type: Article

References (11)

1. Paiella R. Intersubband Transitions in Quantum Structures (2006), McGraw-Hill, New York
2. Gmachl C., Ng M.H., Chu S.N.G., and Cho A.Y. Intersubband absorption at λ∼1.55 μm in well- and modulation-doped GaN/AlGaN multiple quantum wells with superlattice barriers. Appl. Phys. Lett. 77 (2000) 3722-3724
3. Iizuka N., Kaneko K., and Suzuki N. Near-infrared intersubband absorption in GaN/AlN quantum wells grown by molecular beam epitaxy. Appl. Phys. Lett. 81 (2002) 1803-1805
4. Iizuka N., Kaneko K., and Suzuki N. Sub-picosecond all-optical gate utilizing. Opt. Express 13 (2005) 3835-3840
5. Neogi A., Yoshida H., Mozume T., Georgiev N., and Wada O. Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures. IEEE J. Sel. Top. Quantum Electron. 7 (2001) 710-717
6. Jingliang L., Yaochen B., and Guiguang X. Studies of the second-order nonlinear optical susceptibilities of GaN/AlGaN quantum well. Physica E 23 (2004) 70-74
7. Shen Y.R. The Principles of Nonlinear Optics (1984), Wiley, New York
8. Ambacher O., Foutz B., Smart J., Shealy J.R., Weimasnn N.G., Chu K., Murphy M., Sierakowski A.J., Scha5 W.J., Eastman L.F., Dimitrov R., Mitchell A., and Stutzmann M. J. Appl. Phys. 87 (2000) 334
9. Vurgaftman I., Meyer J.R., and Ram-Mohan L.R. Band parameters for III-V compound semiconductors and their alloys. J. Appl. Phys. 89 11 (2001) 5815-5875
10. Strite S., and Morkoc H. GaN, AlN, and InN: a review. J. Vac. Sci. Technol. B 10 (1992) 1237-1266
11. 1-xN alloys. Appl. Phys. Lett. 74 22 (1999) 3344-3346