Intersubband transitions for single, double and triple Si δ-doped GaAs layers

Journal of Physics D: Applied Physics

Volumn 36, Issue 20, 2003, Pages 2457-2464

  Ozturk, Emine ^a   Sokmen, Ismail ^b  

^a CUMHURIYET UNIVERSITY   (Turkey)

^b DOKUZ EYLUL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; EIGENVALUES AND EIGENFUNCTIONS; ELECTRIC FIELD EFFECTS; ELECTRON TRANSITIONS; ELECTRONIC PROPERTIES; ELECTRONIC STRUCTURE; LIGHT ABSORPTION; NUMERICAL ANALYSIS; PHOTODETECTORS; POISSON EQUATION; SEMICONDUCTOR DOPING; SILICON;

CONFINING POTENTIAL; INTERSUBBAND TRANSITIONS; SUBBAND ENERGIES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0242305197     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/20/006     Document Type: Article

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