Threshold-voltage-shift mechanism in pentacene field effect transistors caused by photoirradiation

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3189-3192

  Park, Chang Bum ^a   Yokoyama, Takamichi ^a   Nishimura, Tomonori ^a   Kita, Koji ^a   Toriumi, Akira ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

Electron trapping; Hysteresis; Pentacene; Photoirradiation effect; Threshold voltage shift

Indexed keywords

ELASTICITY; ELECTRON TRAPS; ELECTRONS; GALLIUM ALLOYS; HYSTERESIS; SEMICONDUCTING ORGANIC COMPOUNDS; THRESHOLD VOLTAGE;

BIAS STRESSING; ELECTRON TRAPPING; FORBIDDEN GAPS; INTERFACE REGIONS; PENTACENE; PENTACENE FIELD EFFECT TRANSISTORS; PHOTOINDUCED; PHOTOIRRADIATION EFFECT; POSITIVE SHIFTS; REVERSE BIASSED; SHIFT MECHANISMS; TIME CONSTANTS; TRAPPED ELECTRONS; TRAPPING ENERGIES;

FIELD EFFECT TRANSISTORS;

EID: 54249141748     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3189     Document Type: Article

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