Electrical and optical properties of copper-based chalcogenide thin films deposited by pulsed laser deposition at room temperature: Toward p-channel thin film transistor fabricable at room temperature

Physica Status Solidi (A) Applications and Materials Science

Volumn 205, Issue 8, 2008, Pages 2007-2012

  Hiramatsu, Hidenori ^a   Yanagi, Hiroshi ^a   Kamiya, Toshio ^a   Hirano, Masahiro ^a   Matsunami, Noriaki ^b   Shimizu, Ken Ichi ^c   Hosono, Hideo ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NAGOYA UNIVERSITY   (Japan)

^c KEIO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYERS; ANODE LAYERS; CHALCOGENIDE THIN FILMS; CURRENT MODULATIONS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL CONDUCTIVITIES; FILM DEPOSITIONS; FLEXIBLE ELECTRONIC DEVICES; GATE BIASES; HIGH CONDUCTIVITIES; HIGH VACUUMS; HOLE INJECTION LAYERS; OPTICAL ABSORPTIONS; ORGANIC LIGHT-EMITTING DEVICES; OXYGEN GASES; PULSED LASERS; ROOM TEMPERATURES;

ABSORPTION; CHALCOGENIDES; COPPER; COPPER COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC WAVE ABSORPTION; ENERGY ABSORPTION; HYDROGEN; HYDROGEN SULFIDE; INORGANIC COMPOUNDS; LIGHT ABSORPTION; MODULATION; OPTICAL MATERIALS; OPTICAL PROPERTIES; OXYGEN; PHASE CHANGE MEMORY; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SOLIDS; THICK FILMS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

THIN FILMS;

EID: 54249137774     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200778906     Document Type: Conference Paper

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