Threshold voltage control in buried-channel MOSFETs

Solid-State Electronics

Volumn 41, Issue 9, 1997, Pages 1345-1354

  Bulucea, Constantin ^a   Kerr, Daniel ^a  

^a NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; MATHEMATICAL MODELS; SEMICONDUCTOR DOPING; STATISTICAL METHODS; VLSI CIRCUITS; VOLTAGE CONTROL;

FIELD INDUCE CHANNEL; METALLURGICAL CHANNEL; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0031233535     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(97)00068-3     Document Type: Article

References (33)

1. Grove, A. S., Physics and Technology of Semiconductor Devices. Wiley, New York, 1967.
2. Sze, S. M., Physics of Semiconductor Devices, 2nd edn. Wiley, New York, 1981.
3. Muller, S. and Kamins, T. I., Device Electronics for Integrated Circuits, 2nd edn. Wiley, New York, 1986.
4. Chen, J., CMOS Devices and Technology for VLSI. Prentice-Hall, New Jersey. 1990.
5. Ng, K. K., Complete Guide to Semiconductor Devices. McGraw-Hill, New York, 1995.
6. Edwards, J. R. and Marr, G., IEEE Trans. Electron Devices, 1973, 20, 283.
7. Forbes, L., IEEE J. Solid-State Circuits, 1973, 8, 226.
8. Huang, J. S. T. and Taylor, G. W., IEEE Trans. Electron Devices, 1975, 22, 995.
9. Merckel, G., Process and Device Modeling for IC Design, 1977, 677.
10. Hendrikson, T. E., IEEE Trans. Electron Devices, 1978, 25, 435.
11. El-Mansy, Y. A., IEDM Technical Digest, 1978, p. 20.
12. Mead, C. and Conway, L., Introduction to VLSI Systems. Addison-Wesley, Reading, MA, 1980.
13. Nishiuchi, K., Oka, H., Nakamura, T., Ishikawa, H. and Shinoda, M., IEDM Technical Digest, 1978, p. 26.
14. Sun, E., Hoefflinger, B., Moll, J. and Zimmer, G., IEDM Technical Digest, 1980, p. 791.
15. Hu, G. J., Ting, C. Y., Taur, Y. and Dennard, R. H., IEDM Technical, Digest, 1982, p. 710.
16. Nguyen, T. N. and Plummer, J. D., IEEE Trans. Electron Devices, 1982, 29, 1663.
17. Parillo, L. C., Hillenius, S. J., Field, R. L., Hu, E. L., Fichtner, W. and Chen, M.-L., IEDM Technical Digest, 1984, p. 418.
18. Nakahara, M., Hiruta, Y., Noguchi, T., Yoshida, M., Maeguchi, K. and Kanzaki, K., IEDM Technical Digest, 1985, 238.
19. Hu, G. J. and Bruce, R. H., IEEE Trans. Electron Devices, 1985, 32, 584.
20. Yao, C., Tzou, J., Cheun, R. and Chan, H., Int. Reliability Phys. Symp., 1987, p. 195.
21. Hanafi, H. I., Wordeman, M. R., Wang, L. K., Taur, Y., Sun, J. Y. C., Dennard, R. H., Zicherman, D. S. and Rodriguez, M. D., Solid-St. Dev., 1988, 21-24.
22. Tarasewicz, S. W. and Salama, C. A. T., Solid-St. Electron., 1988, 31, 1441.
23. Woerlee, P. H., Walker, A. J. and Burgmans, A. L. J., Symp. on VLSI Technology, Systems and Applications Proc. of Technical Papers, 1989, pp. 213-216.
24. El-Kareh, B., Abadeer, W. W. and Tonti, W. R., IEDM Technical Digest, 1991, p. 379.
25. Chang, C.-P., Ng, K. K. and Lindenberger, W. S., SPIE Conf. Microelectronics and Reliability, 1992, pp. 46-57.
26. Montree, A. H., Meijssen, V. M. H. and Woerlee, P. H., Symp. VLSI Tech. Systems and Applications Proc., 1993, p. 11.
27. Shockley, W., IEEE Trans Electron Devices, 1976, 23, 597.
28. Technology Modeling Associates, Inc., Palo Alto, CA, Medici: Two-Dimensional Device Simulation Program, 1995.
29. Wong, C. Y., Sun, J. Y.-C., Oh, C. S., Angelucci, R. and Davari, B., IEDM Technical Digest, 1988, p. 238.
30. Walker, D. M. H., Kibarian, J. K., Kellen, C. S. and Strojwas, A. J., Technology CAD Systems, p. 83, Springer-Verlag, Wien, 1993.
31. Hanson, D. A., Chan, H. S., Kao, D.-B., Kibarian, J. K. and Michaels, K. W., Proc. Int. Symp. Semiconductor Manufacturing, 1994, IV3.
32. Chang, W.-H., Davari, B., Wordeman, M. R., Taur, Y., Hsu, C. C.-H. and Rodriguez, M. D., IEEE Trans. Electron. Devices, 1992, 39, 959.
33. Davari, B., Chang, W.-H., Petrillo, K. E., Wong, C. Y., Moy, D., Taur, Y., Wordman, M. R., Sun, J.Y.-C., Hsu, C. C.-H. and Polcari, M. R., IEEE Trans. Electron Devices, 1992, 29, 967.