Filling of very fine via holes for three-dimensional packaging by using ionized metal plasma sputtering and electroplating

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 46, Issue 45-49, 2007, Pages

  Cho, Byeong Hoon ^a   Yun, Jae Jin ^a   Lee, Won Jong ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

3 D packaging, Tsv; Cu electroplating; IMP sputtering; Seed layer; Via filling

Indexed keywords

AGRICULTURAL PRODUCTS; ASPECT RATIO; COPPER; ELECTROCHEMISTRY; PLASMA DEPOSITION; PLASMAS; PRESSURE DROP; SEED; SILICON; THREE DIMENSIONAL;

3-D PACKAGING, TSV; CU ELECTROPLATING; IMP SPUTTERING; SEED LAYER; VIA FILLING;

ELECTROPLATING;

EID: 54249125500     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.L1135     Document Type: Article

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