Effects of electroplating parameters on the defects of copper via for 3D SiP

Solid State Phenomena

Volumn 124-126, Issue PART 1, 2007, Pages 49-52

  Cho, Byeong Hoon ^a   Lee, Won Jong ^a   Lee, Jae Ho ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

Additives; Copper; Electroplating; Pulse reverse; SiP; Via filling

Indexed keywords

ADDITIVES; COPPER; ELECTROPLATING; PARAMETER ESTIMATION; SURFACE DEFECTS;

ELECTROPLATING PARAMETERS; PULSE REVERSE;

SILICON COMPOUNDS;

EID: 38549124047     PISSN: 10120394     EISSN: None     Source Type: Book Series    
DOI: 10.4028/3-908451-31-0.49     Document Type: Conference Paper

References (6)

1. J. J. Kelly and A. C. West: Electrochem. Solid-State Lett. Vol. 2 (1999), p. 561
2. T. P. Moffat, J. E. Bonevich, W. H. Huber, A. Stanishevsky, D. R. Kelly, G. R. Stafford, and D. Josell: J. Electrochem. Soc. Vol. 147 (2000), p. 4524
3. P. Taephaisitphongse, Y. Cao, and A. C. West: J. Electrochem. Soc. Vol. 148 (2001), p. C492
4. J. Reid: Jpn. J. Appl. Phys. Part 1 Vol. 40 (2001), p. 2650
5. L. Bonou, M. Eyraud, R. Denoyel, and Y. Massiani: Electrochem. Acta Vol. 47 (2002), p. 4139
6. K. Takahashi, H. Terao, Y. Tomita, Y. Yamaji, M. Hoshino, T. Sato, T. Morifuji, M. Sunohara and M. Bonkohara: Jpn. J. Appl. Phys. Vol. 40 (2001), p. 3032