Defect trapping and annealing for transition metal implants in group III nitrides

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue , 2000, Pages

  Lorenz, K ^a   Vianden, R ^a   Pearton, S J ^b   Abernathy, Cammy R ^b   Zavada, J M ^c  

^a UNIVERSITY OF BONN   (Germany)

^b University of Florida   (United States)

^c US ARL European Research Office   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; BINDING ENERGY; CHEMICAL VAPOR DEPOSITION; CORRELATION METHODS; CRYSTAL DEFECTS; ION IMPLANTATION; LIGHT EMITTING DIODES; LUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; TRANSITION METALS;

DEFECT TRAPPING; ISOCHRONAL ANNEALING; METAL ORGANIC MOLECULAR BEAM EPITAXY;

GALLIUM NITRIDE;

EID: 3242775414     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300000053     Document Type: Article

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