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Volumn 205, Issue 1, 2008, Pages 93-95

Temperature dependent site change of in in AIN and GaN

Author keywords

[No Author keywords available]

Indexed keywords

HYPERFINE INTERACTION; PERTURBED ANGULAR CORRELATION TECHNIQUES; ROOM TEMPERATURE;

EID: 38849111305     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200777453     Document Type: Conference Paper
Times cited : (2)

References (8)
  • 7
    • 0030404020 scopus 로고    scopus 로고
    • III-Nitride, SiC, and Diamond Materials for Electronic Devices
    • edited by D. K. Gaskill, C. D. Brandt, and R. J. Nemanich, MRS
    • W. Qian, M. Skowronski, and G. R. Rohrer, in: III-Nitride, SiC, and Diamond Materials for Electronic Devices, edited by D. K. Gaskill, C. D. Brandt, and R. J. Nemanich, Mater. Res. Soc. Symp. Proc., Vol. 423 (MRS, 1996), p. 475.
    • (1996) Mater. Res. Soc. Symp. Proc , vol.423 , pp. 475
    • Qian, W.1    Skowronski, M.2    Rohrer, G.R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.