Defect transformation under growth of submonolayer oxides on silicon surfaces at low temperatures

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 399-404

  Dittrich, Th ^a   Bitzer, T ^b   Rada, T ^b   Richardson, N V ^b   Timoshenko, V Yu ^a,c   Rappich, J ^d   Koch, F ^a  

^a TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF ST ANDREWS   (United Kingdom)

^c MOSCOW STATE UNIVERSITY   (Russian Federation)

^d HAHN MEITNER INSTITUT   (Germany)

Author keywords

High resolution electron energy loss spectroscopy; Hydrogenation; Infrared spectroscopy; Initial oxidation; Silicon; Surface recombination; Surface reconstruction

Indexed keywords

CHEMICAL BONDS; DEFECTS; DIMERS; ELECTROMAGNETIC WAVE ABSORPTION; HOLE TRAPS; HYDROGENATION; MESOPOROUS MATERIALS; NANOSTRUCTURED MATERIALS; OXIDATION; OXIDES; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON;

SURFACE RECOMBINATIONS;

MONOLAYERS;

EID: 0035498689     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00675-X     Document Type: Conference Paper

References (13)