Ultrapure C 60 field-effect transistors and the effects of oxygen exposure

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Tapponnier, A ^a   Biaggio, I ^a,b   Gunter P ^a  

^a ETH ZURICH   (Switzerland)

^b LEHIGH UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TREATMENT; IMPURITY GASES; OXYGEN EXPOSURE; PLASTIC ELECTRONICS;

ANNEALING; CARBON; DEGRADATION; ELECTRIC VARIABLES MEASUREMENT; MOLECULAR BEAM EPITAXY; OXYGEN; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM;

FIELD EFFECT TRANSISTORS;

EID: 17944379635     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1883327     Document Type: Article

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