Fabrication of low-temperature-polysilicon thin-film transistors on flexible substrates using excimer-laser crystallization

Journal of the Society for Information Display

Volumn 15, Issue 12, 2007, Pages 1105-1108

  Kim, Yong Hoon ^a   Kim, Won Keun ^a   Han, Jeong In ^a   Moon, Dae Gyu ^b  

^a Korea Electronic Technology Institute (KETI)   (South Korea)

^b Soonchunhyang University   (South Korea)

Author keywords

Excimer laser; Flexible substrate; Poly Si; Sputter

Indexed keywords

ABS RESINS; AMORPHOUS SILICON; ARGON; CONCENTRATION (PROCESS); CRYSTALLIZATION; EXCIMER LASERS; FABRICATION; GAS LASERS; HETEROJUNCTION BIPOLAR TRANSISTORS; INERT GASES; LASERS; NANOCRYSTALLINE ALLOYS; POLYMER FILMS; POLYMERS; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SILICON; SUBSTRATES; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

AMORPHOUS; AVERAGE GRAIN SIZES; EXCIMER; FLEXIBLE SUBSTRATE; FLEXIBLE SUBSTRATES; GATE STRUCTURES; LASER CRYSTALLIZATIONS; MASK PROCESSES; ON/OFF RATIOS; POLY-SI; POLYMER SUBSTRATES; POLYSILICON THIN-FILM TRANSISTORS; SELF-ALIGNED; SI FILMS; SPUTTERING GASES;

AMORPHOUS FILMS;

EID: 54149115688     PISSN: 10710922     EISSN: None     Source Type: Journal    
DOI: 10.1889/1.2825099     Document Type: Conference Paper

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