Electronic structure and optical properties of freestanding [0001] oriented GaN nanowires and nanotubes

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Persson, M P ^a   Di Carlo, A ^a  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRONIC STRUCTURE; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; NANOTUBES; NANOWIRES; OPTICAL MATERIALS; OPTICAL PROPERTIES; OPTICAL TRANSITIONS; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING GALLIUM; VALENCE BANDS; ZINC SULFIDE;

CRITICAL SIZES; EFFECTIVE MASSES; ELECTRONIC STRUCTURE AND OPTICAL PROPERTIES; FUNCTIONAL RELATIONSHIPS; GAN NANOWIRES; LATERAL SIZES; NANOWIRE AXES; OPTICAL POLARIZATIONS; SUBBAND ENERGIES; TIGHT BINDINGS; VALENCE BAND STATES; VALENCE BAND STRUCTURES; WURTZITE GAN NANOWIRES;

NANOSTRUCTURES;

EID: 54049145899     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2977670     Document Type: Article

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