Electronic structure of nanometer-scale GaAs whiskers

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1309-1311

  Persson, M P ^a   Xu, H Q ^a  

^a LUND UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; EFFECTIVE MASS; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRONS AND HOLES; GAAS; GAAS NANOWHISKERS; HEXAGONAL CROSS-SECTIONS; INDIRECT BAND GAP; LATERAL SIZES; NANO-METER-SCALE; THEORETICAL STUDY; TIGHT-BINDING APPROACHES;

ELECTRIC PROPERTIES; ELECTRONIC STRUCTURE; ENERGY GAP; GALLIUM ARSENIDE; NANOWHISKERS; OPTICAL PROPERTIES; SEMICONDUCTING GALLIUM;

CRYSTAL WHISKERS;

EID: 79956000430     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1498871     Document Type: Article

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