Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Liu, X D ^a   Jiang, E Y ^a   Zhang, D X ^b  

^a TIANJIN UNIVERSITY   (China)

^b NANKAI UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONS; EVAPORATION; FILM PREPARATION; INDIUM; MOISTURE; OXIDE FILMS; PHOTOLITHOGRAPHY; THREE DIMENSIONAL; TIN; TITANIUM COMPOUNDS; TRANSPORT PROPERTIES; VAPORS;

AMORPHOUS; BEAM EVAPORATIONS; CONSTRUCTIVE INTERFERENCES; ELECTRICAL CONDUCTIVITIES; ELECTRICAL TRANSPORT PROPERTIES; ELECTRON PHASES; INDIUM TIN OXIDE FILMS; LOCALIZATION EFFECTS; LOW TEMPERATURES; METALLIC CONDUCTIVITIES; NONTRIVIAL; POLYCRYSTALLINE; POLYCRYSTALLINE FILMS; POLYCRYSTALLINE SAMPLES; SEMICONDUCTOR BEHAVIORS;

AMORPHOUS FILMS;

EID: 54049126528     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2988901     Document Type: Article

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