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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 5 A, 2001, Pages 3231-3235

Electronic structure analyses of Sn-doped In2O3

(4) Odaka, Hidefumi a Shigesato, Yuzo b Murakami, Takashi c,e Iwata, Shuichi d

a ASAHI GLASS CO LTD (Japan)

b AOYAMA GAKUIN UNIVERSITY (Japan)

c Hamacho Hanacho Bldg 4F (Japan)

d UNIVERSITY OF TOKYO (Japan)

e Teijin Systems Technology Ltd (Japan)

Author keywords

Electronic structure; ITO

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; FERMI LEVEL; PROBABILITY DENSITY FUNCTION; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; X RAY PHOTOELECTRON SPECTROSCOPY;

CONDUCTION BAND;

ELECTRONIC STRUCTURE;

EID: 0035328605 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.40.3231 Document Type: Article

Times cited : (64)

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