Origin of trapping in multicrystalline silicon

Journal of Applied Physics

Volumn 104, Issue 7, 2008, Pages

  Gundel, Paul ^a   Schubert, Martin C ^a   Warta, Wilhelm ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CRYSTAL IMPURITIES; DEFECT STRUCTURES; DEFECTS; NONMETALS; OXYGEN; POLYSILICON; POWDERS; SILICON;

DEFECT SITES; METALLIC IMPURITIES; MULTICRYSTALLINE SILICONS; OXYGEN DENSITIES; OXYGEN PRECIPITATES; PHOTOVOLTAIC APPLICATIONS; TRAP CENTERS; TRAP DENSITIES;

CRYSTAL DEFECTS;

EID: 54049083821     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2990053     Document Type: Article

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