Beryllium acceptor binding energy in AlN

Applied Physics Letters

Volumn 93, Issue 14, 2008, Pages

  Sedhain, A ^a   Al Tahtamouni, T M ^a   Li, J ^a   Lin, J Y ^b   Jiang, H X ^b  

^a KANSAS STATE UNIVERSITY   (United States)

^b Department of Electrical and Computer Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALKALINE EARTH METALS; ATOMS; BERYLLIUM; BINDING SITES; CONCENTRATION (PROCESS); DOPING (ADDITIVES); EXCITONS; HOLE CONCENTRATION; LIGHT EMISSION; LUMINESCENCE; MAGNESIUM PRINTING PLATES; NUCLEAR ENERGY; POTENTIAL ENERGY; SEMICONDUCTOR QUANTUM WELLS;

AL-RICH ALGAN; BOUND EXCITON; FREE-HOLE CONCENTRATION; MG-DOPED; P-TYPE DOPING; ROOM TEMPERATURES; TIME-RESOLVED PHOTOLUMINESCENCE SPECTROSCOPY;

BINDING ENERGY;

EID: 53649102128     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2996977     Document Type: Article

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