PtIr/ZnO nanowire/pentacene hybrid back-to-back double diodes

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Yang, Ya ^a   Liao, Qingliang ^a   Qi, Junjie ^a   Zhang, Yue ^a   Tang, Lidan ^a   Ye, Ning ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING   (China)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

ELECTRIC TRANSPORT; OFF CURRENT; P-N JUNCTION DIODES; P-N JUNCTIONS; SCHOTTKY; SCHOTTKY BARRIER;

DIODES;

EID: 53349109108     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2981519     Document Type: Article

References (28)

1. S. W. Chung, J. Y. Yu, and J. R. Heath, Appl. Phys. Lett. 0003-6951 10.1063/1.126257 76, 2068 (2000).
2. M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 1089-5647 10.1021/jp0271054 107, 659 (2003).
3. C. S. Lao, J. Liu, P. X. Gao, L. Y. Zhang, D. Davidovic, R. Tummala, and Z. L. Wang, Nano Lett. 1530-6984 10.1021/nl052239p 6, 263 (2006).
4. B. A. Buchine, W. L. Hughes, F. L. Degertekin, and Z. L. Wang, Nano Lett. 1530-6984 10.1021/nl060351x 6, 1155 (2006).
5. X. D. Wang, J. Zhou, J. H. Song, J. Liu, N. S. Xu, and Z. L. Wang, Nano Lett. 1530-6984 10.1021/nl061802g 6, 2768 (2006).
6. D. C. Look, J. Electron. Mater. 0361-5235 10.1007/s11664-006-0258-y 35, 1299 (2006).
7. W. I. Park, G. C. Yi, J. W. Kim, and S. M. Park, Appl. Phys. Lett. 0003-6951 10.1063/1.1584089 82, 4358 (2003).
8. M. W. Allen, S. M. Durbin, and J. B. Metson, Appl. Phys. Lett. 0003-6951 10.1063/1.2768028 91, 053512 (2007).
9. N. Koteeswara Reddy, Q. Ahsanulhaq, J. H. Kim, and Y. B. Hahn, Appl. Phys. Lett. 0003-6951 10.1063/1.2839579 92, 043127 (2008).
10. T. C. L. G. Sollner, W. D. Goodhue, P. E. Tannenwald, C. D. Parker, and D. D. Peck, Appl. Phys. Lett. 0003-6951 10.1063/1.94434 43, 588 (1983).
11. M. Tsuchiya, H. Sakaki, and J. Yoshino, Jpn. J. Appl. Phys., Part 2 0021-4922 10.1143/JJAP.24.L466 24, L466 (1985).
12. J. S. Chen and D. Ma, Appl. Phys. Lett. 0003-6951 10.1063/1.1992653 87, 023505 (2005).
13. S. I. Khondaker, Z. Yao, L. Cheng, J. C. Henderson, Y. X. Yao, and J. M. Tour, Appl. Phys. Lett. 0003-6951 10.1063/1.1773915 85, 645 (2004).
14. Z. Suet, D. J. Paul, J. Zhang, and S. G. Turner, Appl. Phys. Lett. 0003-6951 10.1063/1.2739089 90, 203501 (2007).
15. Y. H. Huang, X. D. Bai, and Y. Zhang, J. Phys.: Condens. Matter 0953-8984 10.1088/0953-8984/18/15/L03 18, L179 (2006).
16. S. H. Jee, S. H. Kim, J. H. Ko, J. Kim, and Y. S. Yoon, J. Ceram. Proc. Res., 9, 42 (2008).
17. S. Hasegawa, S. Nishida, T. Yamashita, and H. Asahi, J. Ceram. Proc. Res. 6, 245 (2005).
18. A. Afzali, C. D. Dimitrakopoulos, and T. L. Breen, J. Am. Chem. Soc. 0002-7863 10.1021/ja0266621 124, 8812 (2002).
19. O. Harnack, C. Pacholski, H. Weller, A. Yasuda, and J. M. Wessels, Nano Lett. 1530-6984 10.1021/nl034240z 3, 1097 (2003).
20. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
21. J. Chen, M. A. Reed, A. M. Rawlett, and J. M. Tour, Science 0036-8075 10.1126/science.286.5444.1550 286, 1550 (1999).
22. J. M. Seminario, A. G. Zacarias, and J. M. Tour, J. Am. Chem. Soc. 0002-7863 10.1021/ja992936h 122, 3015 (2000).
23. E. G. Emberly and G. Kirczenow, Phys. Rev. B 0163-1829 10.1103/PhysRevB.64.125318 64, 125318 (2001).
24. R. Könenkamp, R. C. Word, and M. Godinez, Nano Lett. 1530-6984 10.1021/nl051501r 5, 2005 (2005).
25. C. J. Novotny, E. T. Yu, and P. K. L. Yu, Nano Lett. 1530-6984 10.1021/nl072372c 8, 775 (2008).
26. Q. X. Tang, Y. H. Tong, H. X. Li, Z. Y. Ji, L. Q. Li, W. P. Hu, Y. Q. Liu, and D. B. Zhu, Adv. Mater. (Weinheim, Ger.) 0935-9648 10.1002/adma. 200702145 20, 1511 (2008).
27. C. L. Ho, M. C. Wu, W. J. Ho, and J. W. Liaw, Appl. Phys. Lett. 0003-6951 10.1063/1.123243 74, 4008 (1999).
28. H. B. de Carvalho, M. J. S. P. Brasil, Y. G. Gobato, G. E. Marques, H. V. A. Galeti, M. Henini, and G. Hill, Appl. Phys. Lett. 0003-6951 10.1063/1.2472522 90, 062120 (2007).