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Volumn 55, Issue 4, 2008, Pages 2161-2165

Test procedures for proton-induced single event latchup in space environments

Author keywords

COTS; Hardness assurance; Proton; Radiation effects; SEU; Single event; Single event latchup (SEL); SRAM

Indexed keywords

ELECTRIC POWER PLANTS; HARDNESS; IRRADIATION; PROTONS; STATIC RANDOM ACCESS STORAGE;

EID: 53349108795     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2008.2000773     Document Type: Conference Paper
Times cited : (16)

References (8)
  • 3
    • 0036956113 scopus 로고    scopus 로고
    • Latent damage in CMOS devices from single-event latchup
    • Dec
    • H. N. Becker, T. F. Miyahira, and A. H. Johnston, "Latent damage in CMOS devices from single-event latchup," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 3009-3015, Dec. 2002.
    • (2002) IEEE Trans. Nucl. Sci , vol.49 , Issue.6 , pp. 3009-3015
    • Becker, H.N.1    Miyahira, T.F.2    Johnston, A.H.3
  • 4
    • 0031354388 scopus 로고    scopus 로고
    • Latchup in integrated circuits from energetic protons
    • Dec
    • A. H. Johnston, G. M. Swift, and L. D. Edmonds, "Latchup in integrated circuits from energetic protons," IEEE Trans. Nucl. Sci., vol. 44, no. 6, pp. 2367-2377, Dec. 1997.
    • (1997) IEEE Trans. Nucl. Sci , vol.44 , Issue.6 , pp. 2367-2377
    • Johnston, A.H.1    Swift, G.M.2    Edmonds, L.D.3
  • 8
    • 0024104046 scopus 로고
    • The space radiation environment for electronics
    • Nov
    • E. G. Stassinopoulos and J. P. Raymond, "The space radiation environment for electronics," Proc. IEEE, vol. 76, pp. 1423-12, Nov. 1988.
    • (1988) Proc. IEEE , vol.76 , pp. 1423-1512
    • Stassinopoulos, E.G.1    Raymond, J.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.