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Volumn 53, Issue 4, 2006, Pages 1772-1778

Effects of total dose irradiation on single-event upset hardness

Author keywords

Hardness assurance; Proton irradiation; Single event upset

Indexed keywords

HARDNESS ASSURANCE; RADIATION-INDUCED CURRENTS; RADIATION-INDUCED LEAKAGE CURRENTS; SINGLE-EVENT UPSET (SEU);

EID: 33748345155     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.877896     Document Type: Conference Paper
Times cited : (58)

References (9)
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  • 4
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    • Dec.
    • E. G. Stassinopoulos, G. J. Brucker, O. V. Gunten, and H. S. Kim, "Variation in SEU sensitivity of dose-implanted CMOS SRAMS," IEEE Trans. Nucl. Sci., vol. 36, no. 6, pp. 2330-2338, Dec. 1989.
    • (1989) IEEE Trans. Nucl. Sci. , vol.36 , Issue.6 , pp. 2330-2338
    • Stassinopoulos, E.G.1    Brucker, G.J.2    Gunten, O.V.3    Kim, H.S.4
  • 6
    • 0034504425 scopus 로고    scopus 로고
    • Operation of the TRIUMF (20-500 MeV) proton irradiation facility
    • Reno, Nevada, July
    • E. Blackmore, "Operation of the TRIUMF (20-500 MeV) proton irradiation facility," in IEEE Radiation Effects Data Workshop Record, Reno, Nevada, July 2000, pp. 1-5.
    • (2000) IEEE Radiation Effects Data Workshop Record , pp. 1-5
    • Blackmore, E.1
  • 7
    • 0032318033 scopus 로고    scopus 로고
    • Challenges in hardening technologies using shallow-trench isolation
    • Dec.
    • M. R. Shaneyfelt, P. E. Dodd, B. L. Draper, and R. S. Flores, "Challenges in hardening technologies using shallow-trench isolation, " IEEE Trans. Nucl. Sci., vol. 45, no. 6, pp. 2584-2592, Dec. 1998.
    • (1998) IEEE Trans. Nucl. Sci. , vol.45 , Issue.6 , pp. 2584-2592
    • Shaneyfelt, M.R.1    Dodd, P.E.2    Draper, B.L.3    Flores, R.S.4
  • 8
    • 33144457628 scopus 로고    scopus 로고
    • Radiation-induced edge effects in deep submicron CMOS transistors
    • Dec.
    • F. Faccio and G. Cervelli, "Radiation-induced edge effects in deep submicron CMOS transistors," IEEE Trans. Nucl. Sci., vol. 52, no. 6, pp. 2413-2420, Dec. 2005.
    • (2005) IEEE Trans. Nucl. Sci. , vol.52 , Issue.6 , pp. 2413-2420
    • Faccio, F.1    Cervelli, G.2
  • 9
    • 11044223340 scopus 로고    scopus 로고
    • Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides
    • Dec.
    • M. Turowski, A. Raman, and R. Schrimpf, "Nonuniform total-dose-induced charge distribution in shallow-trench isolation oxides, " IEEE Trans. Nucl. Sci., vol. 51, no. 6, pp. 3166-3171, Dec. 2004.
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , Issue.6 , pp. 3166-3171
    • Turowski, M.1    Raman, A.2    Schrimpf, R.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.