Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale

Physica B: Condensed Matter

Volumn 376-377, Issue 1, 2006, Pages 36-40

  Moutanabbir, O ^a   Terreault, B ^b   Chicoine, M ^c   Simpson, P J ^d   Zahel, T ^e   Hobler, G ^e  

^a KEIO UNIVERSITY   (Japan)

^b INRS EMT   (Canada)

^c UNIVERSITÉ DE MONTRÉAL   (Canada)

^d UNIVERSITY OF WESTERN ONTARIO   (Canada)

^e VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

H defect complexes; Ion cut; Isotope effect; Silicon

Indexed keywords

CRYSTALLINE MATERIALS; DEUTERIUM; HYDROGEN; IONS; ISOTOPES; RAMAN SPECTROSCOPY; SILICON;

CRYSTALLINE SILICON SURFACE BLISTERING AND EXFOLIATION; H-DEFECT COMPLEXES; ION CUT; ISOTOPE EFFECT;

DEFECTS;

EID: 33645139797     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2005.12.011     Document Type: Conference Paper

References (16)

1. M. Bruel Electron. Lett. 31 1995 1201
2. O. Moutanabbir Appl. Phys. Lett. 84 2004 3286
3. O. Moutanabbir Appl. Phys. Lett. 86 2005 051906
4. O. Moutanabbir Appl. Phys. A 80 2005 1455
5. Y.J. Chabal Physica B 273-274 1999 152
6. See for example, B. Bech Nielson, et al., Mater. Sci. Eng. B 36 (1996) 259
7. M. Budde Phys. Rev. B 57 1998 4397
8. E.V. Lavrov Phys. Rev. B 64 2001 035204
9. M.K. Weldon J. Vac. Sci. Technol. B 15 1997 1065
10. F.A. Reboredo Phys. Rev. Lett. 82 1999 4870
11. G.F. Cerofolini Phys. Rev. B 46 1995 2061
12. P. Asoka-Kumar J. Appl. Phys. 76 1994 4935
13. As computed by the binary collision code SRIM, see J.F. Ziegler, J.P. Biersack, www.srim.org.
14. B. Terreault Isotope effects in low energy ion-induced blistering G.K. Celler Silicon-on-Insulator Technology and Devices XII 2005 The Electrochemical Society Pennington, NJ 155
15. O. Moutanabbir J. Chem. Phys. 121 2004 7973
16. T. Zahel Simulation of the isotope effect on defect formation in H/D-implanted Si G.K. Celler Silicon-on-Insulator Technology and Devices XII 2005 The Electrochemical Society Pennington, NJ 179