Si metal-oxide-semiconductor field-effect transistor on Si-on-SiC directly bonded wafers with high thermal conductance

Applied Physics Letters

Volumn 93, Issue 12, 2008, Pages

  Shinohara, Hiroshi ^a   Kinoshita, Hiroyuki ^a   Yoshimoto, Masahiro ^a  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; METALS; MOSFET DEVICES; OPTICAL DESIGN; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SILICON; SILICON CARBIDE; SILICON WAFERS; SULFATE MINERALS; THERMOELECTRICITY; TRANSISTORS; WAFER BONDING;

CHANNEL MOBILITIES; DIRECTLY BONDED WAFERS; HEAT DISSIPATION; HIGH TEMPERATURES; HIGH THERMAL; HIGH-THERMAL CONDUCTIVITY; METAL-OXIDE SEMICONDUCTORS; MOSFETS; SI LAYER; SI MOSFET; SI-WAFER; SINGLE-CRYSTALLINE;

SEMICONDUCTING SILICON;

EID: 52949129099     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2991449     Document Type: Article

References (8)

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